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Volumn 36, Issue 8, 1997, Pages 5025-5028

An observation of oxygen precipitation retardation phenomenon induced by 450°c anneal in Czochralski silicon

Author keywords

Oxygen precipitate; Precipitation retardation; Rod like defect; Three step annealing; Two step annealing

Indexed keywords

CZOCHRALSKI SILICON; PRECIPITATION RETARDATION;

ANNEALING; CRYSTAL GROWTH FROM MELT; CRYSTAL MICROSTRUCTURE; HIGH TEMPERATURE OPERATIONS; NUCLEATION; OXYGEN; SEMICONDUCTING SILICON;

PRECIPITATION (CHEMICAL);

EID: 0031210263 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.5025 Document Type: Article

Times cited : (3)

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