A differential photoconductive AND gate with be-doped low-temperature-grown InGaAs-InAlAs MQW MSM-PD's

IEEE Journal of Quantum Electronics

Volumn 33, Issue 8, 1997, Pages 1308-1314

  Yoneyama, Mikio ^a,b,d,e   Shibata, Tsugumichi ^b,f,g,h   Sano, Eiichi ^a,b   Kawamura, Yuichi ^c   Takahashi, Ryo ^b   Enoki, Takatomo ^a,b   Nagatsuma, Tadao ^a,b   Yaita, Makoto ^b  

^a IEEE   (Japan)

^b NTT CORPORATION   (Japan)

^c Osaka City University   (Japan)

^d KEIO UNIVERSITY   (Japan)

^e Institute of Electronics   (Japan)

^f TOKYO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^g UNIVERSITY OF TOKYO   (Japan)

^h JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

AND gate; MSM PD; Photodetector

Indexed keywords

BERYLLIUM; ION IMPLANTATION; LOW TEMPERATURE OPERATIONS; NAND CIRCUITS; OPTICAL SWITCHES; PHOTODETECTORS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

LOW TEMPERATURE GROWTH; METAL SEMICONDUCTOR METAL PHOTODETECTORS;

LOGIC GATES;

EID: 0031209708     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.605552     Document Type: Article

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