Using TLM principles to determine mosfet contact and parasitic resistance

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1067-1074

  Reeves, Geoffrey K ^a   Harrison, H Barry ^b  

^a RMIT UNIVERSITY   (Australia)

^b GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

PARASITIC RESISTANCE; TRANSMISSION LINE MODEL (TLM);

ELECTRIC RESISTANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION LINE THEORY;

MOSFET DEVICES;

EID: 0031209526     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00062-2     Document Type: Article

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