Extended X-ray absorption fine structure study of defects in Cl doped ZnSe

Solid State Communications

Volumn 103, Issue 8, 1997, Pages 453-457

  Maruyama, Takahiro ^a   Ogawa, Takashi ^a   Akimoto, Katsuhiro ^a   Kitajima, Yoshinori ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

Author keywords

A. semiconductors; A. thin films; C. EXAFS; C. point defects; E. synchrotron radiation; NEXAFS; SEXAFS

Indexed keywords

ANNEALING; POINT DEFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY CRYSTALLOGRAPHY;

X RAY ABSORPTION STRUCTURE ANALYSIS;

SEMICONDUCTING INTERMETALLICS;

EID: 0031209090     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00220-2     Document Type: Article

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