Local cross-sectional profiling of multilayer thin films with an atomic force microscope for layer thickness determination

Journal of Materials Research

Volumn 12, Issue 8, 1997, Pages 1935-1938

  LaGraff, J R ^a   Murduck, J M ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HIGH TEMPERATURE SUPERCONDUCTORS; MULTILAYERS; NONDESTRUCTIVE EXAMINATION; OXIDE SUPERCONDUCTORS; STRONTIUM COMPOUNDS; THICKNESS MEASUREMENT; YTTRIUM COMPOUNDS;

ION MILLING;

SUPERCONDUCTING FILMS;

EID: 0031208574     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0263     Document Type: Article

References (18)

1. For example, C. Saloma, K. Matsuoka, and S. Kawata, Rev. Sci. Instrum. 67, 2072 (1996); A. Wasserman, D. J. Roth, R. Beserman, A. Hoffman, and K. Dettmer, Appl. Phys. Lett. 68, 3407 (1996).
2. For example, C. Saloma, K. Matsuoka, and S. Kawata, Rev. Sci. Instrum. 67, 2072 (1996); A. Wasserman, D. J. Roth, R. Beserman, A. Hoffman, and K. Dettmer, Appl. Phys. Lett. 68, 3407 (1996).
3. For example. Chap. 17 of Electron Microscopy of Thin Crystals, edited by P. Hirsch, A. Howie, R. Nicholson, D. W. Pashley, and M. J. Whelan (R. E. Krieger Publishing Co., Inc., Malabar, FL, 1977).
4. For example, J. Gao and W. H. Wong, Physica C 251, 330 (1995); P. C. McIntyre, M. J. Cima, and A. Roshko, J. Cryst. Growth 149, 64 (1995); D. W. Moon and K. J. Kim, J. Vac. Sci. Technol. A 14, 2744 (1996).
5. For example, J. Gao and W. H. Wong, Physica C 251, 330 (1995); P. C. McIntyre, M. J. Cima, and A. Roshko, J. Cryst. Growth 149, 64 (1995); D. W. Moon and K. J. Kim, J. Vac. Sci. Technol. A 14, 2744 (1996).
6. For example, J. Gao and W. H. Wong, Physica C 251, 330 (1995); P. C. McIntyre, M. J. Cima, and A. Roshko, J. Cryst. Growth 149, 64 (1995); D. W. Moon and K. J. Kim, J. Vac. Sci. Technol. A 14, 2744 (1996).
7. J. A. Bardwell, E. M. Allegreto, B. Mason, L. E. Erickson, and H. G. Champion, Appl. Phys. Lett. 68, 2840 (1996).
8. J. Yoon and D.G. Ivey, J. Mater. Sci. Lett. 15, 551 (1996).
9. J. A. Switzer, C. J. Hung, B. E. Breyfogle, M. G. Shumsky, R. V. Leeuwen, and T. G. Golden, Science 264, 1573 (1994).
10. W. Denk and D. W. Pohl, Appl. Phys. Lett. 59, 2171 (1991).
11. A. J. Howard, A. G. Baca, and R. J. Shul, Appl. Phys. Lett. 68, 3353 (1996).
12. For example, C. L. Pettiette-Hall, J. A. Luine, J. Murduck, J. F. Burch, R. Hu, M. Sergant, and D. St. John, IEEE Trans. On Appl. Supercond. 5, 2087 (1995).
13. Different etching rates of different materials as a function of ion-milling angle can lead to different angles for each material along the etched edge.
14. The cross-sectional analysis feature of the AFM was also used to confirm the calculated thicknesses; however, it is difficult to distinguish the layer boundaries in this analysis mode.
15. 2 plasma, the edge was noticeably rougher, thus making the layers more difficult to resolve.
16. J. R. LaGraff, unpublished results.
17. No extra intralayer boundary in STO1 was observed by the TEM.
18. The STM, SEM, and TEM operate best with conductive or semiconductive samples which dissipate the electrons used in imaging. The AFM is a contact probe and only needs to be in physical contact with the surface to obtain an image, regardless of the electrical properties of the materials.