Formation of single-crystal CoSi2 buffer layers on Si(100) substrates by high dose Co ion implantation for the deposition of YBa2Cu3O7-x thin films

Journal of Materials Research

Volumn 12, Issue 8, 1997, Pages 2072-2080

  Li, Yijie ^a,b   Seidel, P ^a   Machalett, F ^a   Linzen, S ^a   Schmidl, F ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b SUPERCONDUCTIVITY RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; ION IMPLANTATION; LASER ABLATION; OXIDE SUPERCONDUCTORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SINGLE CRYSTALS; SUPERCONDUCTING FILMS; SUPERCONDUCTING TRANSITION TEMPERATURE;

BUFFER LAYERS;

COBALT COMPOUNDS;

EID: 0031208573     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0278     Document Type: Article

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