Effect of methane concentration on the growth of crystalline C3N4 films

Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 515-521

  Chen, Yan ^a,b   Guo, Liping ^a   Wang, E G ^a  

^a INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY AT BUFFALO   (United States)

Author keywords

Bias assisted hfcvd; c3n4; c3n4; ch4 concentration

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL GROWTH; FILM GROWTH; LATTICE CONSTANTS; METHANE; MIXTURES; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); X RAY ANALYSIS; X RAY CRYSTALLOGRAPHY;

BIAS ASSISTED HOT FILAMENT CHEMICAL VAPOR DEPOSITION (BHFCVD); ENERGY DISPERSIVE X RAY ANALYSIS;

NITRIDES;

EID: 0031208023     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00154-1     Document Type: Article

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