Spectroscopic identification of the SiO2 complex in oxygen-implanted GaAs:Si

Physical Review Letters

Volumn 79, Issue 6, 1997, Pages 1074-1077

  Ch Alt, H ^a   Mussig H ^b   Brugger, H ^b  

^a MUNICH UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MOLECULAR VIBRATIONS; SILICA;

ISOTOPE SHIFTS; VIBRATIONAL MODES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031208021     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.79.1074     Document Type: Article

References (26)

1. G. M. Martin and S. Makram-Ebeid, in Deep Centers in Semiconductors, S. T. Pantelides (Gordon and Breach, New York, 1986), p. 399.
2. A. M. Huber, N. T. Linh, M. Valladon, J. L. Debrun, G. M. Martin, A. Mitonneau, and A. Mircea, J. Appl. Phys., 50, 4022 (1979).
3. Z. L. Akkerman, L. A. Borisova, and A. F. Kravchenko, Sov. Phys.-Semicond., 10, 590 (1976).
4. W. Kaiser, P. H. Keck, and C. F. Lange, Phys. Rev., 101, 1264 (1956).
5. J. Schneider, B. Dischler, H. Seelewind, P. M. Mooney, J. Lagowski, M. Matsui, D. R. Beard, and R. C. Newman, Appl. Phys. Lett., 54, 1442 (1989).
6. C. Song, W. Ge, D. Jiang, and C. Hsu, Appl. Phys. Lett., 50, 1666 (1987).
7. X. Zhong, D. Jiang, W. Ge, and C. Song, Appl. Phys. Lett., 52, 628 (1988).
8. H. Ch. Alt, Appl. Phys. Lett., 54, 1445 (1989).
9. H. Ch. Alt, Appl. Phys. Lett., 55, 2736 (1989).
10. M. Skowronski, S. T. Neild, and R. E. Kremer, Appl. Phys. Lett., 57, 902 (1990).
11. H. Ch. Alt, Phys. Rev. Lett., 65, 3421 (1990).
12. M. Linde, J.-M. Spaeth, and H. Ch. Alt, Appl. Phys. Lett., 67, 662 (1995).
13. H. Ch. Alt, Mater. Sci. Forum, 143–147, 283 (1994).
14. C. Song, B. Pajot, and C. Porte, Phys. Rev. B, 41, 12-330 (1990).
15. G. D. Watkins and J. W. Corbett, Phys. Rev., 121, 1001 (1961).
16. J. W. Corbett, G. D. Watkins, R. M. Chrenko, and R. S. McDonald, Phys. Rev., 121, 1015 (1961).
17. P. N. Favennec, J. Appl. Phys., 47, 2532 (1976).
18. S. J. Pearton, Mater. Sci. Rep., 4, 313 (1990).
19. M. S. Goorsky, T. F. Kuech, F. Cardone, P. M. Mooney, G. J. Scilla, and R. M. Potemski, Appl. Phys. Lett., 58, 1979 (1991).
20. J. W. Huang and T. F. Kuech, Appl. Phys. Lett., 65, 604 (1994).
21. H. Müssig, C. Wölk, H. Brugger, and A. Forchel, Inst. Phys. Conf. Ser., 136, 529 (1993).
22. H. Müssig and H. Brugger (to be published)
23. Th. Hackbarth, H. Müssig, G. Jonsson, and H. Brugger, in Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, K. Eberl, at al, (Kluwer Academic, Dordrecht, The Netherlands, 1995), p. 345.
24. D. J. Chadi, Phys. Rev. Lett., 77, 861 (1996).
25. R. C. Newman, Infra-red Studies of Crystal Defects (Taylor&Francis, London, 1973).
26. R. Murray, R. C. Newman, M. J. L. Sangster, R. B. Beall, J. J. Harris, P. J. Wright, J. Wagner, and M. Ramsteiner, J. Appl. Phys., 66, 2589 (1989).