Conduction mechanism in a metal-insulator-semiconductor structure with a low temperature GaAs insulating layer

Solid-State Electronics

Volumn 41, Issue 8, 1997, Pages 1075-1078

  Arifin, P ^a   Tansley, T L ^a   Goldys, E M ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR SEMICONDUCTOR DIODES;

ACTIVATION ENERGY; ALUMINUM; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; LOW TEMPERATURE EFFECTS; METALLIZING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES;

MIS DEVICES;

EID: 0031207879     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00061-0     Document Type: Article

References (19)

1. Kaminska, M., Liliental-Weber, Z., Weber, E. R., George, T., Kortright, J. B. and Calawa, A. R., Appl. Phys. Lett., 1989, 54, 1881.
2. Melloch, M. R., Otsuka, N., Woodall, J. M., Warren, A. C. and Freeouf, J., Appl. Phys. Lett., 1990, 57, 1531.
3. Warren, A. C., Woodall, J. M., Freeouf, J. L., Grischkovsky, D., Melloch, M. R. and Otsuka, N., Appl. Phys. Lett., 1990, 57, 1331.
4. Arifin, P., Goldys, E. M. and Tansley, T. L., Phys. Rev. B, 1995, 52, 5708.
5. Arifin, P., Tansley, T. L. and Goldys, E. M., COMMAD96 Conference on Optoelectronic and Microelectronic Materials and Devices, 8-11 December 1996, Canberra, Australia.
6. Look, D. C., Walters, D. C., Robinson, G. D., Sizelove, J. R., Mier, M. G. and Stutz, C. E., J. Appl. Phys., 1993, 74, 306, also Look, D. C., J. Appl. Phys., 1990, 70, 3148.
7. Look, D. C., Walters, D. C., Robinson, G. D., Sizelove, J. R., Mier, M. G. and Stutz, C. E., J. Appl. Phys., 1993, 74, 306, also Look, D. C., J. Appl. Phys., 1990, 70, 3148.
8. Kaminska, M. and Weber, E. R., 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, Greece 6-10 Aug. 1990 vol. 1, p. 473.
9. Yin, L. W., Nguyen, N. X., Hwang, Y., Ibbetson, J. P., Kolbas, R. M., Gossard, A. C. and Mishra, U. K., J. Electron. Mater., 1993, 22, 1503.
10. Verma, A. K., Tu, J., Smith, J. S., Fujioka, H. and Weber, E. R., J. Electron. Mater., 1993, 22(12), 1417.
11. Padovani, F. A. and Stratton, R., Solid St. Electron., 1966, 9, 695.
12. Tansley, T. L. and Owen, S. J. T., IEEE Trans. Electron. Devices, 1976, ED-23, 1123.
13. Shen, H., Rong, F. C., Lux, R., Pamulapati, J., Taysing-Lara, M., Dutta, M. and Poindexter, E. H., Appl. Phys. Lett., 1992, 61(13), 1585.
14. Pelster, R., Nimtz, G. and Wessling, B., Phys. Rev. B, 1994, 49, 12,718.
15. Meyer, H., Organic Semiconductors, Verlag-Chemie GmbH Winheim, 1974, p. 383.
16. Mahmood, F. S. and Gould, R. D., Thin Solid Films, 1994, 23, 529.
17. Suguna, P., Mangalaraj, D., Naryandass, S. K. and Meena, P., Phys. Stat. Sol., 1966, 155, 405.
18. Shibub, S. I. and Gould, R. D., Thin Solid Films, 1995, 254, 193.
19. Rouleau, J. F., Goyette, J., Bose, T. K., Singh, R. and Tandon, R. P., Phys. Rev. B, 1995, 52(7), 4801.