GaAs structures with deep centres for ionizing radiation detection

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 395, Issue 1, 1997, Pages 132-133

  Khludkov, S S ^a   Okaevich, L S ^a   Potapov, A I ^a   Tolbanov, O P ^a  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFUSION IN SOLIDS; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; MICROSTRIP DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

MICROSTRIP DETECTORS;

RADIATION DETECTORS;

EID: 0031207099     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00630-X     Document Type: Article

References (3)

1. S.S. Khludkov, O.P. Tolbanov, Izv. Vyssh. Uchebn. Zaved. Fiz. 10 (1992) 33-45 [in Russian].
2. B.I. Shklovsky, A.P. Ephros, Electronic Properties of Doped Semiconductors, Science, Moscow, 1979.
3. W. van Roosbroeck, H.C. Casey Jr., Phys. Rev. B 5 (1972) 2154.