Nd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations

Materials Letters

Volumn 32, Issue 2-3, 1997, Pages 91-95

  Gan, Runjin ^a   Liu, Fengmin ^a   Qi, Li ^a   Wang, Jizheng ^b  

^a Department of Basic Science Courses   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

Amorphous silicon; Electron beam; Evaporation; Nd doping

Indexed keywords

AMORPHOUS SILICON; ATOMS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRON SPIN RESONANCE SPECTROSCOPY; EVAPORATION; FERMI LEVEL; NEODYMIUM; OPTICAL PROPERTIES; TEMPERATURE;

DANGLING BOND; ELECTRON BEAM EVAPORATION; OPTICAL BAND GAP;

AMORPHOUS FILMS;

EID: 0031206882     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(97)00012-8     Document Type: Article

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