Preparation of CaGa2S4:Ce TFEL devices with inter-layer reaction

Thin Solid Films

Volumn 306, Issue 1, 1997, Pages 160-162

  Xu, Chunxiang ^a   Ma, Long ^b   Cao, Lin ^c   Xu, Zheng ^d   Lou, Zhidong ^a   Liu, Xingren ^b   Xu, Xurong ^d,e  

^a TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

^c CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d BEIJING JIAOTONG UNIVERSITY   (China)

^e INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Annealing; Crystallization; Evaporation; X ray diffraction

Indexed keywords

ANNEALING; CRYSTALLIZATION; EPITAXIAL GROWTH; EVAPORATION; GALLIUM COMPOUNDS; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; X RAY DIFFRACTION ANALYSIS;

ATOM LAYER EPITAXY; ENERGY DISPERSIVE X RAY SPECTROSCOPY; THIN FILM ELECTROLUMINESCENCE;

ELECTROLUMINESCENCE;

EID: 0031200685     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00153-3     Document Type: Article

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