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Journal of Crystal Growth

Volumn 179, Issue 1-2, 1997, Pages 50-56

Liquid-phase epitaxial growth of GaAsxP1-x layers on GaP substrates

(6) Mei, X a Crnatovic, A a Jedral, L Z a Ruda, H E a Lu, Z H a,b Dion, M a,b

a UNIVERSITY OF TORONTO (Canada)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

GaAsxP1 x; Graded layer; LPE

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

LATTICE MISMATCH; SEMICONDUCTING GALLIUM PHOSPHIDE;

LIQUID PHASE EPITAXY;

LATTICE MISMATCH; SEMICONDUCTING GALLIUM PHOSPHIDE;

EID: 0031195436 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00010-9 Document Type: Article

Times cited : (2)

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