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Volumn 179, Issue 1-2, 1997, Pages 32-36

Scanning electron microscopy of InAs aggregation on GaAs vicinal surfaces in molecular beam epitaxy

Author keywords

GaAs; InAs; Island; MBE; SEM

Indexed keywords

AGGLOMERATION; ATOMIC FORCE MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ISLAND DENSITY; SEMICONDUCTING INDIUM ARSENIDE;

MOLECULAR BEAM EPITAXY;

EID: 0031195433 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00114-0 Document Type: Article

Times cited : (1)

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