Reduction of As carryover by PH3 overpressure in metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 179, Issue 1-2, 1997, Pages 26-31

  Ryu, Sang Wan ^a   Jeong, Weon Guk ^b   Kim, In ^a   Kim, Hee Dae ^b   Kim, Hak Hwan ^b   Choe, Byung Doo ^a   Park, Seoung Hwan ^c  

^a Seoul National University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Catholic University of Daegu   (South Korea)

Author keywords

As carryover; DCXD; InGaAs InP; MOVPE

Indexed keywords

INTERFACES (MATERIALS); PHOSPHORUS COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTOR SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

CARRYOVER; OVERPRESSURE; PHOSPHINES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0031195431     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00096-1     Document Type: Article

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