A novel bi-directional step-flow growth mode: C60 on Ge(100) and GaAs(110)

Surface Science

Volumn 383, Issue 2-3, 1997, Pages

  Dunphy, J C ^a,b   Klyachko, D ^a   Xu, Hang ^a   Chen, D M ^a  

^a HARVARD UNIVERSITY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Epitaxy; Growth; Scanning tunneling microscopy; Surface structure, morphology, roughness and topography

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS;

LATTICE MISMATCH; STEP FLOW GROWTH; SURFACE TOPOGRAPHY;

FULLERENES;

EID: 0031193013     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00248-3     Document Type: Article

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