Characterizing wearout, breakdown and trap generation in thin silicon oxide

Microelectronics Reliability

Volumn 37, Issue 7 SPEC. ISS., 1997, Pages 1029-1038

  Dumin, David J ^a  

^a Clemson University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; INTERFACES (MATERIALS); WEAR OF MATERIALS;

TRANSIENT CURRENTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031192491     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(96)00265-x     Document Type: Article

References (41)

1. 2. Appl. Phys. Lett., 1977, 30, 601.
2. 2. J. Appl. Phys., 1978, 49, 2478.
3. 2 trapped charge distribution by capacitance-voltage analysis of undoped polycrystalline silicon-oxide-silicon capacitors. Appl. Phys. Lett., 1984, 44, 417.
4. Uraoka, Y. and Tsuji, K., A new technique for evaluating gate oxide reliability using a photon emission method. IEICE Trans. Electron, 1993, E76-C, 519.
5. Sune, J., Placencia, I., Barniol, N., Farres, E. and Aymerich, X., Degradation and breakdown of gate oxides in VLSI devices. Phys. Stat. Sol. (a), 1989, 111, 675.
6. DiMaria, D. J., Arnold, D. and Cartier, E., Degradation and breakdown of silicon dioxide films on silicon. Appl. Phys. Lett., 1992, 61, 2329.
7. Arnold, D., Cartier, E. and DiMaria, D. J., Theory of high-field electron transport and ionization in silicon oxide. Phys. Rev. B., 1994, 49, 10,278.
8. DiMaria, D. J., Cartier, E. and Arnold, D. Impact ionization, trap creation, degradation, and breakdown in silicon oxide films on silicon. J. Appl. Phys., 1993, 73, 3367.
9. Lee, J. C., Chen, I.-C. and Hu, C., Modeling and characterization of gate oxide reliability. IEEE Trans. on Electron Devices, 1988, ED-35, 2268.
10. DiMaria, D. J., Hole trapping, substrate currents, and breakdown in thin silicon dioxide films. IEEE Electron Device Lett., 1995, EDL-16, 184.
11. Weinberg, Z. A. and Nguyen, T. N., The relation between positive charge and breakdown in metal-oxide-silicon structures. J. Appl. Phys., 1987, 61, 1947.
12. Gao, X., Influence of gate material on charge-to-breakdown in p-type Si MOS structure. Extended Abstracts, Spring Meeting of the Electrochemical Society, San Francisco, Abs. 136, 1994, p. 209.
13. Morita, M., Teramoto, A., Makihara, K., Ohmi, T., Nakazato, Y., Uchiyama, A. and Abe, T., Effects of Si wafer surface micro-roughness on electrical properties of very-thin gate oxide films. Proceedings of the Third International Symposium on Ultra Large Scale Integration, Science and Technology, ULSI Science and Technology/1991, Vol. 91-11, eds J. M. Andrews and G. K. Celler, 1991, p. 400.
14. Dumin, D. J., Mopuri, S. K., Vanchinathan, S., Scott, R. S. and Lewis, T. G., High field related thin oxide wearout and breakdown. IEEE Trans. on Electron Devices, 1995, ED-42, 760.
15. 2 films. Thin Solid Films, 1990, 185, 347.
16. Hokari, Y., Stress voltage polarity dependence of thermally grown thin gate oxide wearout. IEEE Trans. on Electron Devices, 1988, ED-35, 1299.
17. Dumin, D. J. and Maddux, J. R., Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides. IEEE Trans. on Electron Devices, 1993, ED-40, 986.
18. Scott, R. S. and Dumin, D. J., The transient nature of low-level leakage currents in thin silicon oxides. J. Electrochem. Soc., 1995, 142, 586.
19. Dumin, D. J. and Maddux, J. R., Measurement of high voltage stress induced traps inside thin silicon oxide films. Material Research Society Symposium Proceedings 284, Amorphous Insulating Thin Films, eds J. Kanicki, W. L. Warren, R. A. B. Devine and M. Matsumura, 1993, p. 247.
20. Manzini, S. and Modelli, A., Tunneling discharge of trapped holes. In Insulating Films on Semiconductors, eds J. F. Verweis and D. R. Wolters. Elsevier Science, 1983, p. 112.
21. Dumin, D. J., Scott, R. S. and Subramoniam, R., A model relating wearout induced physical changes in thin oxides to the statistical description of breakdown. Proc. Int. Rel. Phys, Symp., Vol. 31, 1993, p. 285.
22. Natarajan, R. and Dumin, D. J., Traps in reoxidized nitrided oxides of varying thickness. J. Electrochem. Soc., 1994, 142, 645.
23. Dumin, D. J., Cooper, J. R., Dickerson, K. J. and Brown, G. A., The polarity, field, and fluence dependence of interface trap generation in thin silicon oxide. Solid-State Electronics, 1992, 35, 515.
24. Subramoniam, R., Scott, R. S. and Dumin, D. J., A statistical model of oxide breakdown based on a physical description of wearout. IEDM Digest of Technical Papers, 1992, 135.
25. Mann, N. R., Schafer R. E., Singpurwalla, N. D., Methods for Statistical Analysis of Reliability and Life Data, Chapter 4. John Wiley, New York, 1974.
26. Shiono, N. and Itsumi, M., A lifetime projection method using series model and acceleration factors for TDDB failures of thin gate oxides. Proc. Int. Rel. Phys. Symp., Vol. 31, 1993, p. 1.
27. Vollertsen, R.-P. and Kleppmann, W. G., Dependence of dielectric time to breakdown distributions on test structure area. Proc. IEEE/ICMTS, Vol. 1991, 1991, p. 75.
28. 2. Proc. Int. Rel. Phys. Symp., Vol. 32, 1994, p. 120.
29. 2 films in thin silicon oxides. Proc. Int. Rel. Phys. Symp., Vol. 33, 1995, p. 124.
30. Schuegraf, K. F. and Hu, C., Hole injection oxide breakdown model for very low voltage lifetime extrapolation. Proc. Int. Rel. Phys. Symp., Vol. 31, 1993, p. 7.
31. Dumin, D. J. and Vanchinathan, S., Bipolar stressing, breakdown, and trap generation in thin silicon oxides. IEEE Trans. on Electron Devices, 1994, ED-41, 936.
32. Dumin, D. J., Vanchinathan, S., Mopuri, S. and Subramoniam, R., Evidence for non-uniform trap distribution in thin oxides after high voltage stressing. J. Electrochem. Soc., 1995, 142, 2055.
33. Scott Jr, R. S., Dumin, N. A., Hughes, T. W., Dumin, D. J. and Moore, B. T., Properties of high voltage stress generated traps in thin silicon oxides. Proc. Int. Rel. Phys. Symp. Vol. 33, 1995, p. 131.
34. Ning, T. H., Capture cross section and trap concentration of holes in silicon oxide. J. Appl. Phys., 1976, 47, 1079.
35. Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) Physics and Technology. John Wiley, New York, 1982, p. 532.
36. Gladstone, S. M., Thickness dependence of wearout in thin silicon oxides. MSEE thesis, Clemson University, May 1995.
37. Hughes, T. W., The spatial distribution of high-voltage stress-generated traps inside thin silicon oxides. MSEE thesis, Clemson University, May 1995.
38. 2 films. IEEE Trans. on Electron Devices, 1988, ED-35, 2259.
39. Rofan, R. and Hu, C., Stress-induced oxide leakage. IEEE Electron Device Lett., 1991, EDL-12, 632.
40. Scott Jr, R. S., Determination of spatial location and energy level distributions of high-voltage stress-generated traps in thin oxides. Ph.D. thesis, Clemson University, 1995.
41. Scott, R. S. and Dumin, D. J., The superposition of transient low-level leakage currents in thin oxides. Solid-State Electronics, April 1995.