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Volumn 12, Issue 7, 1997, Pages 1866-1871
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The influence of total pressure in the reactor and carrier gas on the chemical vapor deposition of Al from tri-isobutyl aluminum
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Author keywords
[No Author keywords available]
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Indexed keywords
ARGON;
CHEMICAL VAPOR DEPOSITION;
FILM GROWTH;
GRAPHITE FIBERS;
HELIUM;
ORGANOMETALLICS;
PRESSURE EFFECTS;
PYROLYSIS;
REACTION KINETICS;
THERMAL DIFFUSION IN SOLIDS;
AUTO PRESSURE CONTROL (APC) SYSTEMS;
TRIISOBUTYL ALUMINUM;
ALUMINUM;
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EID: 0031192061
PISSN: 08842914
EISSN: None
Source Type: Journal
DOI: 10.1557/JMR.1997.0256 Document Type: Article |
Times cited : (4)
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References (17)
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