Measurements of current transport in metal/Si1-xGex Schottky diodes

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 2437-2440

  He, L ^a   Shi, Z Q ^b  

^a NORTHERN ILLINOIS UNIVERSITY   (United States)

^b HUGHES STX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; PALLADIUM; SEMICONDUCTING SILICON COMPOUNDS; SURFACES; TEMPERATURE; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

CURRENT VOLTAGE TEMPERATURE CHARACTERIZATION; FIELD EMISSION; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 0031192043     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580903     Document Type: Article

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