SCOPUS 정보 검색 플랫폼

Volumn 37, Issue 7 SPEC. ISS., 1997, Pages 1039-1043

Thin oxide MOS damage generated after treatment in a merie reactor

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); INTERFACES (MATERIALS); MAGNETRONS; PLASMAS; REACTIVE ION ETCHING; VOLTAGE MEASUREMENT;

MAGNETRON ENHANCED REACTIVE ION ETCHING (MERIE) REACTOR;

MOS DEVICES;

EID: 0031191637 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/s0026-2714(96)00266-1 Document Type: Article

Times cited : (1)

References (10)

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7
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