Origin of the semimetal-to-semiconductor transition observed in two-dimensional Er suicide upon H exposure: Evidence of two chemisorption sites

Surface Science

Volumn 383, Issue 2-3, 1997, Pages 340-349

  Wetzel, P ^a   Angot, T ^a   Pirri, C ^a   Gewinner, G ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

Angle resolved photoemission; Chemisorption; Electron energy loss spectroscopy; Epitaxy; Metal semiconductor interfaces

Indexed keywords

AGE HARDENING; CHEMISORPTION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; ERBIUM COMPOUNDS; HYDROGEN BONDS; INTERFACES (MATERIALS); PHASE TRANSITIONS; PHOTOEMISSION; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTOR METAL BOUNDARIES;

ANGLE RESOLVED PHOTOEMISSION (ARP); ERBIUM SILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031191583     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00206-9     Document Type: Article

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