DX centres versus shallow D- centres in AlyGa1-yAs-based quantum wells

Semiconductor Science and Technology

Volumn 12, Issue 7, 1997, Pages 813-819

  Huant, S ^a   Mandray, A ^a   Martinezf, G ^a   Etienne, B ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION; EPITAXIAL GROWTH; MAGNETOOPTICAL EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

REFLECTIVE HIGH ENERGY ELECTRON DIFFRACTION OSCILLATION; X RAY DIFFRACTION MEASUREMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031191540     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/7/010     Document Type: Article

References (29)

1. Huant S, Najda S P and Etienne B 1990 Phys. Rev. Lett. 65 1486
2. Mandray A, Huant S and Etienne B 1992 Europhys. Lett. 20 181 Huant S, Mandray A, Martinez G, Grynberg M and Etienne B 1992 Surf. Sci. 263 565
3. Mandray A, Huant S and Etienne B 1992 Europhys. Lett. 20 181 Huant S, Mandray A, Martinez G, Grynberg M and Etienne B 1992 Surf. Sci. 263 565
4. Chadi D J and Chang K J 1988 Phys. Rev. Lett. 61 873
5. Proc. Symp. on DX Centres and Other Metastable Defects in Semiconductors (Mauterndorf, 1991) 1991 Semicond. Sci. Technol. 6 (10B)
6. Mosser W, Contreras S, Robert J L, Piotrzkowski R, Zawadzki W and Rochette J F 1991 Phys. Rev. Lett. 66 1737
7. Baj M, Dmowski L H and Slupinski T 1993 Phys. Rev. Lett. 71 3529
8. Willke U, Fille M F, Maude D K, Portal J C and Gibart P 1995 Proc. 22nd Int. Conf. on the Physics of Semiconductors (Vancouver, 1994) ed D J Lockwood (Singapore: World Scientific) p 2295
9. Huant S, Mandray A, Zhu J, Louie S G, Pang T and Etienne B 1993 Phys. Rev. B 48 2370
10. Goorsky M S, Kuech T F, Tischler M A and Potemski RM 1991 Appl. Phys. Lett. 59 2269 Kuech T F, Wolford D J, Potemski R, Bradley J A, Kelleher K H, Yan D, Farrell J P, Lesser P M S and Pollak F H 1987 Appl. Phys. Lett. 51 505
11. Goorsky M S, Kuech T F, Tischler M A and Potemski RM 1991 Appl. Phys. Lett. 59 2269 Kuech T F, Wolford D J, Potemski R, Bradley J A, Kelleher K H, Yan D, Farrell J P, Lesser P M S and Pollak F H 1987 Appl. Phys. Lett. 51 505
12. Huant S, Mandray A and Etienne B 1995 Solid State Commun. 93 435
13. Theis T N, Kuech T F, Palmateer L F and Mooney P M 1984 Inst. Phys. Conf. Ser. 74 241
14. Fraizzoli S, Bassani F and Buczko R 1990 Phys. Rev. B 41 5096
15. Pang T and Louie SG 1990 Phys. Rev. Lett. 65 1635 Trzeciakowski W, Baj M, Huant S and Brunel L C 1986 Phys. Rev. B 33 6846
16. Pang T and Louie SG 1990 Phys. Rev. Lett. 65 1635 Trzeciakowski W, Baj M, Huant S and Brunel L C 1986 Phys. Rev. B 33 6846
17. Mooney P M 1991 Semicond. Sci. Technol. 6 B1
18. Sellitto P, Sicart J, Robert J L and Planel R 1995 Phys. Rev. B 51 16778
19. Danan G, Etienne B, Mollot F, Planel R, Jean-Louis A M, Alexandre F, LeRoux G, Marzin J Y, Savary H and Sermage B 1987 Phys. Rev. B 35 6207
20. Langer J M and Heinrich H 1985 Phys. Rev. Lett. 55 1414 Delerue C, Lannoo M and Langer J M 1988 Phys. Rev. Lett. 61 199
21. Langer J M and Heinrich H 1985 Phys. Rev. Lett. 55 1414 Delerue C, Lannoo M and Langer J M 1988 Phys. Rev. Lett. 61 199
22. Lannoo M 1992 Phys. Scr. T45 135
23. Pötz W and Vogl P 1983 Solid State Commun. 48 249 Brunel L C, Huant S, Baj M and Trzeciakowski W 1986 Phys. Rev. B 33 6863
24. Pötz W and Vogl P 1983 Solid State Commun. 48 249 Brunel L C, Huant S, Baj M and Trzeciakowski W 1986 Phys. Rev. B 33 6863
25. Shi J M, Peeters F M, Hai C Q and Devreese J T 1991 Phys. Rev. B 44 5692 See also reference [8]
26. Wilamowski Z, Kossut J, Jantsch W and Ostermayer G 1991 Semicond. Sci. Technol. 6 B38
27. Contreras S, Lorenzini P, Mosser V, Robert J L and Piotrzkowsji R 1993 Japan. J. Appl. Phys. 32 197 Lorenzini P 1992 PhD Thesis University of Montpellier
28. Contreras S, Lorenzini P, Mosser V, Robert J L and Piotrzkowsji R 1993 Japan. J. Appl. Phys. 32 197 Lorenzini P 1992 PhD Thesis University of Montpellier
29. Najda S P, Armistead C J, Trager C J and Stradling R A 1989 Semicond. Sci. Technol. 4 439