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Volumn 178, Issue 3, 1997, Pages 229-232
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A new etchant to reveal the subsurface damage on polished gallium arsenide substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
AGENTS;
BISMUTH COMPOUNDS;
CHEMICAL POLISHING;
CRYSTAL DEFECTS;
ETCHING;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SUBSTRATES;
ETCHANT;
SUBSURFACE DAMAGE;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0031191534
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)01189-X Document Type: Article |
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Times cited : (8)
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References (3)
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