Auger heating of carriers in GaAs/AlAs heterostructures

Solid State Communications

Volumn 103, Issue 2, 1997, Pages 77-81

  Borri, P ^a   Ceccherini, S ^a   Gurioli, M ^a   Bogani, F ^b  

^a UNIVERSITY OF FLORENCE   (Italy)

^b UNIVERSITY OF FLORENCE   (Italy)

Author keywords

A. Quantum wells; A. Semiconductors; D. Electron electron interactions; E. Time resolved optical spectroscopies

Indexed keywords

CARRIER CONCENTRATION; FERMI LEVEL; HEATING; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS;

AUGER HEATING; ELECTRON ELECTRON INTERACTIONS; FREQUENCY RESOLVED SPECTROSCOPIC TECHNIQUES; TIME RESOLVED SPECTROSCOPIC TECHNIQUES;

HETEROJUNCTIONS;

EID: 0031191332     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00150-6     Document Type: Article

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