A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors

Microelectronics Reliability

Volumn 37, Issue 7 SPEC. ISS., 1997, Pages 1147-1150

  Savić, Zoran ^a   Radjenović, Branislav ^b  

^a MILITARY TECHNICAL INSTITUTE   (Serbia)

^b UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETERS; ELECTRON TUNNELING; INTERFACES (MATERIALS); IRRADIATION;

BORDER TRAP DENSITIES;

MOS DEVICES;

EID: 0031191049     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(96)00277-6     Document Type: Article

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