Feasibility of steam tunnel oxide for advanced non volatile memories

Solid-State Electronics

Volumn 41, Issue 7, 1997, Pages 975-979

  Ghidini, G ^a   Tosi, M ^a   Clementi, C ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRON TUNNELING; HEAT TREATMENT; LOW TEMPERATURE OPERATIONS; OXIDES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CHARGE TRAPPING; STEAM TUNNEL OXIDES;

NONVOLATILE STORAGE;

EID: 0031190670     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00008-7     Document Type: Article

References (8)

1. Feigl, F. J., et al., J. Appl. Phys., 1981, 52, 5665.
2. DiMaria, D. J., et al., J. Appl. Phys., 1993, 73, 3367.
3. Saks et al., App. Phys. Lett., 1995, 67, 374.
4. 2 Interface, 1996, p. 15.
5. 2 Interface, 1996, p. 645.
6. Ghezzi, P., et al., 3rd Int. Symp. on Physical and Failure Analysis of Integrated Circuits, November 1991.
7. Lenzlinger, M. and Snow, E. H., J. Appl. Phys., 1969, 40, 278.
8. Yamada, S., et al., IEDM 93, 1993, p. 23.