Simulation of pulse height spectra in ion beam induced charge microscopy of polycrystalline silicon

Journal of Applied Physics

Volumn 82, Issue 2, 1997, Pages 742-747

  Donolato, C ^a   Nipoti, R ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GRAIN BOUNDARIES; ION BEAMS; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; SILICON SOLAR CELLS;

CHARGE MICROSCOPY; CHARGE PULSE HEIGHT SPECTRA;

IRRADIATION;

EID: 0031190411     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365768     Document Type: Article

References (23)

1. Beam Injection Assessment of Defects in Semiconductors (BIADS '93), Bologna, Italy, edited by A. Cavallini, C. Donolato, and S. Pizzini [Mater. Sci. Eng. B 24 (1994)].
2. M. B. H. Breese, D. N. Jamieson, and P. J. C. King, Materials Analysis Using a Nuclear Microprobe (Wiley, New York, 1996).
3. D. Angell, B. B. Marsh, N. Cue, and J. W. Miao, Nucl. Instr. Methods Phys. Res. B 44, 172 (1989).
4. C. Donolato, R. Nipoti, D. Govoni, G. P. Egeni, V. Rudello, and P. Rossi, in Beam Injection Assessment of Defects in Semiconductors, (BIADS '96), El Escorial, Spain, edited by J. Piqueras, P. Fernández, and B. Méndez, [Mater. Sci. Eng. B 42, 306 (1996)].
5. M. B. H. Breese, A. Saint, F. W. Sexton, K. M. Horn, H. Schöne, B. L. Doyle, J. S. Laird, and G. J. F. Legge, J. Appl. Phys. 77, 3734 (1995).
6. M. B. H. Breese, G. W. Grime, and M. Dellith, Nucl. Instr. Methods Phys. Res. B 77, 332 (1993).
7. M. B. H. Breese, J. S. Laird, G. R. Moloney, A. Saint, and D. N. Jamieson, Appl. Phys. Lett. 64, 1962 (1994).
8. D. C. Joy, in X-Kay Spectrometry in Electron Beam Instruments, edited by D. B. Williams, J. I. Goldstein, and D. E. Newbury (Plenum, New York, 1995), p. 53.
9. H. L. Malm, C. Canali, J. W. Mayer, M. A. Nicolet, K. R. Zanio, and W. Akutagawa, Appl. Phys. Lett. 26, 344 (1975).
10. H. H. Barrett, J. D. Eskin, and H. B. Barber, Phys. Rev. Lett. 75, 156 (1995).
11. G. A. Sai-Halasz and M. R. Wordeman, IEEE Electron Device Lett. EDL-1, 211 (1980).
12. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
13. G. E. Possin and C. G. Kirkpatrick, in Scanning Electron Microscopy 1979, edited by O. Johari (SEM, Inc., AMF O'Hare, Chicago, IL, 1979), Vol. 1, p. 245.
14. C. Donolato, J. Appl. Phys. 54, 1314 (1983).
15. H. F. Wolf, Silicon Semiconductor Data (Pergamon, Oxford, 1969), p. 77.
16. G. Dahlquist and Å. Björck, Numerical Methods (Prentice-Hall, Englewood Cliffs, NJ, 1974), p. 453.
17. P. Boccaccio, D. Bollini, D. Ceccato, G. P. Egeni, P. Rossi, V. Rudello, and M. Viviani, Nucl. Instrum. Methods Phys. Res. B 109/110, 94 (1996).
18. F. Cervellera, C. Donolato, G. P. Egeni, G. Fortuna, R. Nipoti, P. Polesello, P. Rossi, V. Rudello, E. Vittone, and M. Viviani, in Proceedings of the 5th International Conference on Nuclear Microprobe Technology and Applications, Santa Fe, New Mexico, November 10-15, 1996 [Nucl. Instrum. Methods Phys. Res. B (to be published)].
19. C. Donolato, Solid-State Electron. 31, 1587 (1988).
20. A. Barhdadi, M. Barbé, A. Riviere, and J. L. Maurice, in Ref. 1, p. 68.
21. C. Donolato, Semicond. Sci. Technol. 7, 37 (1992).
22. U. Werner and H. Blumtritt, Inst. Phys. Conf. Ser. 117, 751 (1991).
23. E. U. Condon and H. Odishaw, Handbook of Physics (McGraw-Hill, New York, 1967), p. 1-169.