A monolithic dual-band HgCdTe infrared detector structure

IEEE Electron Device Letters

Volumn 18, Issue 7, 1997, Pages 352-354

  Parish, G ^a   Musca, C A ^a   Siliquini, J F ^a   Antoszewki, J ^a   Dell, J M ^a   Nener, B D ^a   Faraone, L ^a   Gouws, G J ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b DSI CSIR Nanotechnology Innovation Centre   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL BAND INFRARED DETECTORS;

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CROSSTALK; ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

INFRARED DETECTORS;

EID: 0031189475     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.596934     Document Type: Article

References (8)

1. E. R. Blazejewski, J. M. Arias, G. M. Williams, W. McLevige, M. Zandian, and J. Pasko, "Bias-switchable dual-band HgCdTe infrared photodetector," J. Vac. Sci. Technol. B, vol. 10, p. 1626, 1992.
2. K. Konuma, Y. Asano, K. Masubuchi, H. Utsumi, S. Tohyama, T. Endo, H. Azuma, and N. Teranishi, "An infrared-bi-color Schottky-barrier CCD image sensor for precise thermal images," IEEE Trans. Electron Devices, vol. 43, p. 282, 1996.
3. M. B. Reine, P. W. Norton, R. Starr, M. H. Weiler, M. Kestigian, B. L. Musicant, P. Mitra, T. Schimert, F. C. Case, I. B. Bhat, H. Ehsani, and V. Rao, "Independently accessed back-to-back HgCdTe photodiodes: A new dual-band infrared detector," J. Electron. Mater., vol. 24, p. 669, 1995.
4. X. C. Zhang, C. C. Huang, Z. X. Wang, W. Li, L. Tian, and M. Zhang, "Two-color HgCdTe Photoconductive IR detectors sensitive to radiation from 3-5 μm and 8-12 μm," in Proc. Narrow Band Semiconductors Conf., New Mexico, 1995.
5. B. K. Jindal, "Results of a two-color detector array in bulk mercury cadmium telluride," in Proc. SPIE, Orlando, FL, vol. 2225, p. 278, 1994.
6. C. A. Musca, J. F. Siliquini, K. A. Fynn, B. D. Nener, L. Faraone, and S. J. C. Irvine, "MOCVD-grown wider bandgap capping layers in HgCdTe long wavelength infrared photoconductors," Semicond. Sci. Technol., vol. 11, p. 1912, 1996.
7. x Te infrared photoconductor arrays," Semicond. Sci. Technol., vol. 9, p. 1515, 1994.
8. S. E. Schacham and E. Finkman, "Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects," J. Appl. Phys., vol. 57, p. 2001, 1985.