Characterization of GaAs/AlxGa1-xAs heterointerface defects by means of capacitive measurememts

Applied Physics A: Materials Science and Processing

Volumn 65, Issue 1, 1997, Pages 39-42

  Valcheva, E P ^a  

^a UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTROSTATICS; LIQUID PHASE EPITAXY; NUMERICAL ANALYSIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT;

ELECTRON TRAP DENSITY;

HETEROJUNCTIONS;

EID: 0031187887     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050538     Document Type: Article

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