Metal-oxide semiconductor field-effect transistors using Schottky barrier drains

Electronics Letters

Volumn 33, Issue 15, 1997, Pages 1341-1342

  Huang, Feng Jung ^a   OK, K ^a  

^a University of Florida   (United States)

Author keywords

MOSFET; Schottky barriers

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; RADIO FREQUENCY AMPLIFIERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

SCHOTTKY BARRIER DRAINS (SBDR);

MOSFET DEVICES;

EID: 0031187598     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970904     Document Type: Article

References (1)

1. LEPSELTER, M.P., and SZE, S.M.: "SB-IGFET": An insulated-gate field-effect transistor using Schottky barrier contacts as source and drain', Proc. IEEE, 1968, 56, pp. 1088