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Volumn 304, Issue 1-2, 1997, Pages 196-200

Transmission electron microscopic studies of ternary FeNi-silicide layers prepared by metal vapour vacuum arc ion implantation

(6) Li, X N a,b Jin, S c Dong, C b,d Zhang, Z a Gong, Z X b Ma, T C b

a INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

b DALIAN UNIVERSITY OF TECHNOLOGY (China)

c IMEC (Belgium)

d Dept of Mat Sci and Engineering ^* (China)

Author keywords

Ion implantation; Phase transitions; Silicides; Transmission electron microscopy

Indexed keywords

ANNEALING; FLUORSPAR; ION IMPLANTATION; IRON; MOLECULAR ORIENTATION; NICKEL; PHASE TRANSITIONS; SUBSTRATES; TERNARY SYSTEMS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

METAL VAPOR VACUUM ARC (MEVVA) ION IMPLANTATION;

SEMICONDUCTING FILMS;

EID: 0031187406 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00207-1 Document Type: Article

Times cited : (5)

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