Piezoresistivity of polycrystalline p-type diamond films of various doping levels at different temperatures

Journal of Applied Physics

Volumn 82, Issue 2, 1997, Pages 729-732

  Wang, W L ^a,b,c   Jiang, X ^a   Taube, K ^a   Klages, C P ^a  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

^b CHONGQING UNIVERSITY   (China)

^c LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; FILM GROWTH; PIEZOELECTRIC MATERIALS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

GAUGE FACTOR; PIEZORESISTIVITY;

DIAMOND FILMS;

EID: 0031187390     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365606     Document Type: Article

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