Application of solid immersion lens to high-resolution photoluminescence imaging of patterned GaAs quantum wells

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 7 B, 1997, Pages

  Sasaki, Takeaki ^a   Baba, Motoyoshi ^a   Yoshita, Masahiro ^a   Akiyama, Hidefumi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGING TECHNIQUES; MICROSTRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

PHOTOLUMINESCENCE IMAGING; SOLID IMMERSION LENS;

OPTICAL INSTRUMENT LENSES;

EID: 0031187176     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l962     Document Type: Article

References (7)