Performance and reliability trade-off of large-tilted-angle implant p-pocket on stacked-gate memory devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4289-4294

  Shen, Shih Jye ^a   Chen, Hsin Ming ^a   Lin, Chrong Jung ^a   Chen, Hwi Huang ^b   Hong, Gary ^b   Hsu, Charles Ching Hsiang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b United Microelectronics Cooperation   (Taiwan)

Author keywords

Channel hot electron injection; Disturbance; Large tilted angle implant; p pocket; Punchthrough; Snap back; Stacked gate memory device

Indexed keywords

CHANNEL HOT ELECTRON INJECTION; DRAIN READ DISTURBANCE; LARGE TILTED ANGLE IMPLANT; READ CURRENT DEGRADATION; STACKED GATE MEMORY DEVICE;

ELECTRIC FIELD EFFECTS; ELECTRON BEAMS; HOT CARRIERS; ION IMPLANTATION; PERFORMANCE; RELIABILITY; SEMICONDUCTOR STORAGE;

PROM;

EID: 0031187050     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4289     Document Type: Article

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