Characteristics of silicon-field emitter arrays fabricated by using wafers separated by implantation of oxygen

Journal of the Electrochemical Society

Volumn 144, Issue 7, 1997, Pages 2538-2541

  Matsuzaki, K ^a,b   Uematsu, T ^a   Ryokai, Y ^a   Amano, A ^a  

^a FUJI ELECTRIC CO   (Japan)

^b ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; OXYGEN; SILICON WAFERS;

FIELD EMITTER ARRAYS (FEA); FOWLER NORDHEIM TUNNELING PROCESS; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

FIELD EMISSION CATHODES;

EID: 0031186918     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837851     Document Type: Article

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