Photoquenching of the hopping conduction in arsenic-ion-implanted MBE grown GaAs

Solid State Communications

Volumn 103, Issue 3, 1997, Pages 145-149

  Kuriyama, K ^a   Kazama, K ^a   Koyama, T ^a   Takamori, T ^b   Kamijoh, T ^b  

^a HOSEI UNIVERSITY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

A. semiconductors; C. point defects; D. electronic transport; D. radiation effects

Indexed keywords

ANNEALING; ELECTRON TRANSPORT PROPERTIES; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; PHOTOCHEMICAL REACTIONS; POINT DEFECTS; QUENCHING; RADIATION EFFECTS; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

CRYSTALLINITY; ELECTRONIC TRANSPORT; HOPPING CONDUCTION; LATTICE STRAIN; PHOTOQUENCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031186870     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00175-0     Document Type: Article

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