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Volumn 12, Issue 7, 1997, Pages 881-887
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Effects of tensile strain on the optical properties of an AlGaP-based neighbouring confinement structure
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
BAND STRUCTURE;
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
STRAIN;
GAS SOURCE MOLECULAR BEAM EPITAXY;
TENSILE STRAIN;
THERMAL QUENCHING;
SEMICONDUCTING ALUMINUM COMPOUNDS;
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EID: 0031186163
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/12/7/019 Document Type: Article |
Times cited : (4)
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References (21)
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