Hot-carrier stress effects on the amplitude of random telegraph signals in small area Si p-MOSFETs

Microelectronics Reliability

Volumn 37, Issue 7 SPEC. ISS., 1997, Pages 1015-1019

  Simoen, E ^a   Claeys, C ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; STRESSES; TELEGRAPH;

RANDOM TELEGRAPH SIGNALS (RTS);

MOSFET DEVICES;

EID: 0031185411     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(96)00263-6     Document Type: Article

References (23)

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