In situ stress measurements of sputter-deposited films

Sensors and Actuators, A: Physical

Volumn 62, Issue 1-3, 1997, Pages 663-667

  Honda, N ^a   Shoji, F ^b   Kidoguchi, S ^c   Hamada, Y ^c   Nagata, M ^a   Oura, K ^c  

^a Yamatake Honeywell Co Ltd   (Japan)

^b KYUSHU KYORITSU UNIVERSITY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

In situ stress measurements; Sputter deposition

Indexed keywords

LASER BEAMS; PHOTODIODES; SILICON NITRIDE; SPUTTER DEPOSITION; STRESS ANALYSIS; SUBSTRATES;

IN SITU STRESS MEASUREMENTS;

THIN FILMS;

EID: 0031175626     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01539-2     Document Type: Article

References (8)

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2. R.W. Hoffman, in C.H.S. Dupuy and A. Cachard (eds.), Physics of Nonmetallic Thin Films, Plenum Press, New York, 1974, Ch. 12.
3. D.W. Hoffman and J.A. Thornton, Internal stress in sputtered chromium, Thin Solid Films, 40 (1977) 355.
4. J.A. Thornton and D.W. Hoffman, Internal stress in titanium, nickel, molybdenum, and tantalum films deposited by cylindrical magnetron sputtering, J. Vac. Sci. Technol., 14 (1977) 164.
5. D.W. Hoffman and J.A. Thornton, Compressive stress and inert gas in Mo films sputtered from a cylindrical-post magnetron with Ne, Ar, Kr, and Xe, J. Vac. Sci. Technol. 17 (1980) 380.
6. Y. Iimura, H. Miyashita and H. Sano, Low-stress tantalum absorbers deposited by sputtering for X-ray masks, J. Vac. Sci. Technol., B7 (1989) 1680.
7. G. Este and W.D. Westwood, Stress control in reactively sputtered A1N and TiN films, J. Vac. Sci. Technol., A5 (4) (1987) 1892.
8. F. Shoji and K. Oura, A novel method of sputter deposition utilizing a hot-cathode Penning ion source, Jpn. J. Appl. Phys., 29 (1990) L812.