Effectiveness and limits of the deconvolution of SIMS depth profiles of boron in silicon

Surface and Interface Analysis

Volumn 25, Issue 6, 1997, Pages 464-477

  Gautier, B ^a   Dupuy, J C ^a   Prost, R ^a   Prudon, G ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; BORON; ERROR ANALYSIS; FUNCTIONS; ITERATIVE METHODS; PROBLEM SOLVING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

CONFIDENCE LEVEL; DECONVOLUTION; DEPTH PROFILING;

SEMICONDUCTING SILICON;

EID: 0031170263     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199706)25:6<464::AID-SIA271>3.0.CO;2-#     Document Type: Article

References (14)