Josephson properties of bi2sr2cacii2oy bicrystal junctions grown by a sequential deposition technique using molecular beam epitaxy

IEEE Transactions on Applied Superconductivity

Volumn 7, Issue 2 PART 3, 1997, Pages 2300-2303

  Lee, Kiejin ^a   Iguchi, Lenari ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL LATTICES; CRYSTALLOGRAPHY; FILM GROWTH; MAGNESIA; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

BICRYSTAL JUNCTIONS; SEQUENTIAL DEPOSITION TECHNIQUE;

JOSEPHSON JUNCTION DEVICES;

EID: 0031170181     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.621698     Document Type: Article

References (9)

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