Radiation effects in thin-film ferroelectric PZT for non-volatile memory applications in microelectronics

Journal de Physique III

Volumn 7, Issue 6, 1997, Pages 1227-1243

  Leray, Jean Luc ^a   Musseau, Olivier ^a   Paillet, Philippe ^a   Autran, Jean Luc ^a   Sodi, Frédéric ^a   Coïc, Yves Marie ^a  

^a CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FATIGUE OF MATERIALS; HYSTERESIS; IONIZATION; MICROELECTRONIC PROCESSING; RADIATION EFFECTS; SEMICONDUCTING LEAD COMPOUNDS; THIN FILMS;

DOMAIN WALL MOTION; LEAD ZIRCONIUM TITANATE; NON VOLATILE MEMORY APPLICATIONS; PINNING;

FERROELECTRIC MATERIALS;

EID: 0031170078     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997185     Document Type: Article

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