Transport phenomena in a high pressure crystal growth system: In situ synthesis for InP melt

Journal of Crystal Growth

Volumn 177, Issue 3-4, 1997, Pages 196-206

  Zhang, H ^a   Prasad, V ^a   Anselmo, A P ^b   Bliss, D F ^b   Iseler, G ^b  

^a STONY BROOK UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Convection; Czochralski growth; High pressure; Liquid encapsulated Cz growth

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; ENCAPSULATION; FINITE VOLUME METHOD; HIGH PRESSURE EFFECTS; SYNTHESIS (CHEMICAL);

GRASHOF NUMBER; HIGH PRESSURE LIQUID ENCAPSULATION (HPLEC);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031169264     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01079-2     Document Type: Article

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