Influence of the electric field on the excitonic luminescence of epitaxial GaN films

Journal of Luminescence

Volumn 72-74, Issue , 1997, Pages 865-866

  Nelson, D K ^a   Kagan, V D ^a   Kalinina, E V ^a   Jacobson, M A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Electric field effect; Excitons

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; EPITAXIAL GROWTH; EXCITONS; IONIZATION; PHOTOLUMINESCENCE; QUENCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS;

EXCITON RADIATIVE RECOMBINATION; EXCITONIC LUMINESCENCE; GALLIUM NITRIDE; LUMINESCENCE INTENSITY; VOLTAGE INDUCED VARIATION;

LUMINESCENCE OF INORGANIC SOLIDS;

EID: 0031168443     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(96)00338-9     Document Type: Article

References (3)

1. D.K. Nelson, Yu.V. Melnik, A.V. Selkin, M.A. Jakobson, V.D. Dmitriev, K.G. Irvin and C.H. Carter, Jr., Phys. Solid State 38 (1996) 455.
2. R.E. Hetrick and K.F. Yeung, J. Appl. Phys. 42 (1971) 2882.
3. M.A. Jacobson, V.D. Kagan, E.V. Kalinina, D.K. Nelson, A.V. Selkin V.A. Dmitriev, K.G. Irvine and C.H. Carter, Jr., Proc. 23rd Int. Conf. on Physics of Semiconductors, Berlin, 1996 (World Scientific, Singapore, 1996), Vol. 1, 569-572.