Near room-temperature growth of SiO2 films for p-HgCdTe passivation by liquid phase deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6 A, 1997, Pages

  Houng, Mau Phon ^a   Wang, Yeong Her ^a   Wang, Na Fu ^a   Huang, Chien Jung ^a   Chang, Wai Jyh ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DEPOSITION; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; FILM GROWTH; INFRARED DEVICES; LEAKAGE CURRENTS; MERCURY COMPOUNDS; PASSIVATION; REFRACTIVE INDEX; SEMICONDUCTING CADMIUM COMPOUNDS;

DIELECTRIC BREAKDOWN STRENGTH; LIQUID PHASE DEPOSITION; SURFACE CHARGE DENSITY;

SILICA;

EID: 0031168279     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l696     Document Type: Article

References (13)