Influence of substrate annealing on the epitaxial growth of BaTiO3 thin films by metal-organic chemical vapor deposition

Journal of Materials Research

Volumn 12, Issue 6, 1997, Pages 1625-1633

  Hwang, Cheol Seong ^a,c   Vaudin, Mark D ^a   Stauf, Gregory T ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Advanced Technology Materials Inc   (United States)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GRAIN SIZE AND SHAPE; MAGNESIA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATE ANNEALING;

BARIUM TITANATE;

EID: 0031168188     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0222     Document Type: Article

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