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Volumn 25, Issue 6, 1997, Pages 454-457

Profiling shallow as implants with low-energy Cs bombardment on a modified cameca IMS-4f

Author keywords

Cesium; Depth profile; Implant; SIMS

Indexed keywords

ARSENIC; CESIUM; ION BEAMS; ION BOMBARDMENT; SECONDARY ION MASS SPECTROMETRY;

EID: 0031168029     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199706)25:6<454::AID-SIA266>3.0.CO;2-N     Document Type: Article
Times cited : (2)

References (18)
  • 1
    • 0003776072 scopus 로고
    • edited by A. Benninghoven, R. J. Colton, D. S. Simons and H. W. Werner, Springer-Verlag, Berlin
    • R. v. Criegern and I. Weitzel, in Secondary Ion Mass Spectrometry-SIMS V, edited by A. Benninghoven, R. J. Colton, D. S. Simons and H. W. Werner, pp. 319-322. Springer-Verlag, Berlin (1986).
    • (1986) Secondary Ion Mass Spectrometry-SIMS V , pp. 319-322
    • Criegern, R.V.1    Weitzel, I.2
  • 12
    • 6244262441 scopus 로고
    • edited by A. Benninghoven, Y. Nihei, R. Shimizu and H. W. Werner, Wiley, New York
    • B. Rasser, D. Renard and M. Schuhmacher, in Secondary Ion Mass Spectrometry-SIMS IX, edited by A. Benninghoven, Y. Nihei, R. Shimizu and H. W. Werner, pp. 278-281. Wiley, New York (1994).
    • (1994) Secondary Ion Mass Spectrometry-SIMS IX , pp. 278-281
    • Rasser, B.1    Renard, D.2    Schuhmacher, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.