Arcjet plasma enhanced vapor phase epitaxy of GaN

Materials Letters

Volumn 31, Issue 3-6, 1997, Pages 161-164

  Cappelli, M A ^a   Kull, A E ^a   Schwendner, K ^a   Lee, H ^b   Harris Jr , S J ^b   Mroczkowski, J ^c  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Lockheed Martin IR Imaging Systems   (United States)

Author keywords

Arcjet; Gallium nitride; Heteroepitaxy; Plasma deposition; X ray diffraction

Indexed keywords

EPITAXIAL GROWTH; GALLIUM COMPOUNDS; NITRIDES; PLASMA APPLICATIONS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; HETEROEPITAXY; PLASMA DEPOSITION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031167958     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(96)00264-9     Document Type: Article

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