Critical review of the epitaxial growth of semiconductors by rapid thermal chemical vapor deposition

Materials Science and Engineering R: Reports

Volumn 20, Issue 1, 1997, Pages 1-36

  Campbell, S A ^a  

^a 4 174 EE/CSci Building ^*  (United States)

Author keywords

Epitaxial growth; GeCSi; GeSi; Heterojunctions; Rapid thermal processing; Semiconductors; Vapour phase epitaxy

Indexed keywords

ACTIVATION ENERGY; BIPOLAR TRANSISTORS; CARBON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOSFET DEVICES; SEMICONDUCTOR GROWTH; SILANES; SILICON WAFERS; SUBSTRATES;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0031167612     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-796X(96)00196-9     Document Type: Article

References (180)

1. G.H. Hu, IEEE Trans. Electron Devices, 31 (1984) 62.
2. J.E. Hall, J.A. Seitchik, L.A. Arledge, P. Yang and P.K. Fung, IEDM Tech. Dig., (1984) 292.
3. A. Herlet and K. Raithel, Solid-State Electron., 9 (1966) 1089.
4. R.R. Troutman, Latchup in CMOS Technology, Kluwer, Dordrecht, 1986.
5. R.S. Payne, W.N. Grant and W.J. Bertram, IEDM Tech. Dig., (1980) 248.
6. P. Burggraaf, Semicond. Int., (June 1991) 68.
7. T. Suzuki, M. Ura and T. Ogawa, in H.R. Huff and R.R. Burgess (eds.), Semiconducting Silicon, Electrochemical Society, Princeton, NJ, 1973, p. 191.
8. W. Kern (ed.), Handbook of Semiconductor Wafer Cleaning Technology: Science, Technology, and Applications, Noyes, Park Ridge, NJ, 1993.
9. W. Kern and D.A. Puotinen, RCA Rev., 187 (June 1970).
10. H.R. Chang, in W.M. Bullis and L.C. Kimberling (eds.), Defects in Silicon, Electrochemical Society, Pennington, NJ, 1983.
11. G. Ghidini and F.W. Smith, J. Electrochem. Soc., 131 (1984) 2924.
12. F.W. Smith and G. Ghidini, J. Electrochem. Soc., 129 (1982) 1300.
13. G.W. Rubloff, J. Vac. Sci. Technol. A, 8 (1990) 1857.
14. Y.-K. Sun, D.J. Bonser and T. Engel, Phys. Rev. B, 3 (1991) 14309.
15. J.A. Friedrich, G.W. Neudeck and S.T. Liu, Appl. Phys. Lett., 53 (1988) 2543.
16. T.O. Sedgwick, P.D. Agnello, D. Nguyen Ngoc, T.S. Kuan and G. Scilla, Appl. Phys. Lett., 58 (1991) 1896.
17. H.M. Liaw and J.W. Rose, in B.J. Baliga (ed.), Epitaxial Silicon Technology, Academic Press, Orlando, FL, 1986.
18. T. Aoyama, Y. Inoue and T. Suzuki, in H.R. Huff, R.J. Kriegler and Y. Takeishi (eds.), Semiconductor Silicon 1981, Electrochemical Society, Pennington, NJ, 1981, p. 379.
19. J.P. Hirth and G.H. Pond, Prog. Mater. Sci., 11 (1963).
20. J. Bloem and W.A.P. Claassen, Philips Tech. Rev., 41 (1983) 60.
21. V.S. Ban and S.L. Gilbert, J. Electrochem. Soc., 122 (1975) 1382.
22. W.A.P. Claasan and J. Bloem, J. Cryst. Growth, 50 (1980) 807.
23. B.A. Joyce and R.R. Bradley, J. Electrochem. Soc., 110 (1963) 1235.
24. M.E. Coltrin, R.J. Lee and J.A. Miller, J. Electrochem. Soc., 133 (1986) 1206.
25. B.S. Mayerson, Appl. Phys. Lett., 48 (1986) 797.
26. B.S. Mayerson, E. Ganin, D.A. Smith and T.N. Nguyen, J. Electrochem. Soc., 133 (1986) 1232.
27. B.S. Meyerson, IBM J. Res. Dev., 34 (1990) 806.
28. S.M. Hu, J. Appl. Phys., 40 (1969) 4413.
29. I. Suemune, Y. Kunitsugu, Y. Tanaka, Y. Kan and M. Yamanishi, Appl. Phys. Lett., 53 (1988) 2173.
30. R. Rief, J. Vac. Sci. Technol. A, 2 (1984) 429.
31. S.L. Wright and H. Kroemer, Appl. Phys. Lett., 36 (1980) 210.
32. K. Kugimiya, Y. Hirofuji and N. Matsuo, Jpn. J. Appl. Phys., 24 (1985) 564.
33. B.S. Meyerson, F.J. Himpsel and K.J. Uram, Appl. Phys. Lett., 57 (1990) 1034.
34. T. Suzuki, T. Inoue, T. Aoyama and M. Maki, J. Electrochem. Soc., 132 (1985) 1480.
35. G. Skelly and H.C. Adams, J. Electrochem. Soc., 120 (1973) 116.
36. G.R. Srinivasan, J. Electrochem. Soc., 127 (1980) 2305.
37. G.R. Srinivasan, J. Electrochem. Soc., 127 (1980) 1334.
38. G.K. Ackerman and E. Ebert, J. Electrochem. Soc., 130 (1983) 1910.
39. M. Wong and R. Rief, IEEE Trans. Electron Devices, 32 (1985) 83, 89.
40. H.R. Chang, J. Electrochem. Soc., 132 (1985) 219.
41. Y. Ota, J. Appl. Phys., 51 (1980) 1102.
42. F.C. Eversteyn, Philips Res. Rep., 19 (1975) 45.
43. R.B. Fair, in F.F.Y. Wang (ed.), Impurity Doping Processes in Silicon, North-Holland, New York, 1981.
44. C. Hill, in J.F. Gibbons, L.D. Hess and T.W. Sigmon (eds.), Laser and Electron Beam Solid Interactions and Materials Processing, Elsevier North-Holland, New York, 1981.
45. T.O. Sedgwick, J. Electrochem. Soc., 130 (1983) 484.
46. S.A. Campbell, J.D. Leighton, G.H. Case and K. Knutson, J. Vac. Sci. Technol. B, 7 (1989) 1080.
47. J.R. Coaton and J.R. Fitzpatrick, IEE Proc., 127A (1980) 142.
48. A. Leitoila, J.F. Gibbons, T.J. McGee, J. Peng and J.D. Hong, Appl. Phys. Lett., 35 (1979) 532.
49. J.L. Altrip, A.G.R. Evans, J.R. Logan and C. Jeynes, Solid State Electron., 33 (1990) 659.
50. J.L. Altrip, A.G. Evans, N.D. Young and J.R. Logan, Mater. Res. Soc. Symp. Proc., 224 (1991) 49.
51. J.R. Marchiando, P. Roitman and J. Albers, IEEE Trans. Electron Devices, 32 (1985) 2322.
52. R.B. Fair, Trans. Electron Devices, 35 (1988) 285.
53. Y. Kim, H.Z. Massoud and R.B. Fair, J. Electron. Mater., 18 (1989) 143.
54. H. Kinoshita, T.H. Huang and D.L. Kwong, Mater. Res. Soc. Symp. Proc., 303 (1993) 259.
55. S.R. Weinzierl, J.M. Heddleson, R.J. Hillard, P. Rai-Choudhury, R.G. Mazur, C.M. Ozburn and P. Potyraj, Solid State Technol., (January 1993) 31.
56. I.W. Wu and L.J. Chen, J. Appl. Phys., 58 (1985) 3032.
57. S.S. Gill and B.J. Sealy, J. Electrochem. Soc., 133 (1986) 2590.
58. S.J. Pearton and R. Caruso, J. Appl. Phys., 66 (1989) 2482.
59. T.E. Kazior, S.K. Brierley and F.J. Piekarski, IEEE Trans. Sem. Man., 4 (1991) 21.
60. S.K. Brierley, T.E. Kazior and F.J. Piekarski, Mater. Res. Soc. Symp. Proc., 224 (1991) 451.
61. J. Nulman, J.P. Krusius and A. Gat, IEEE Electron Devices Lett., 6 (1985) 205.
62. M.M. Moslehi, K.C. Saraswat and S.C. Shatas, Proc. SPIE, 623 (1986) 92.
63. R. Deaton and H.Z. Massoud, J. Appl. Phys., 70 (1991) 3588.
64. J.-M. Dilhac, Mater. Res. Soc. Symp. Proc., 146 (1989) 333.
65. M.H. Moslehi and K.C. Saraswat, IEEE Trans. Electron Devices, 32 (1985) 106.
66. M.A. Schmidt, F.L. Terry, Jr., B.P. Mather and S.D. Senturia, IEEE Trans. Electron Devices, 35 (1988) 1627.
67. T. Hori, H. Iwasaki and K. Tsuji, IEEE Trans. Electron Devices, 36 (1989) 340.
68. T. Hori and H. Iwasaki, Electron Devices Lett., 10 (1989) 195.
69. T. Hori, IEEE Trans. Electron Devices, 37 (1990) 2058.
70. J. Kuehne, G.Q. Lo and D.L. Kwong, Mater. Res. Soc. Symp. Proc., 224 (1991) 367.
71. R.W. Mann, C.A. Racine and R.S. Bass, Mater. Res. Soc. Symp. Proc., 224 (1991) 115.
72. R. Beyers and R. Sinclair, J. Appl. Phys., 57 (1985) 5240.
73. S.S. Iyer, C.-Y. Ting and P.M. Fryer, J. Electrochem. Soc., 302 (1985) 2240.
74. C.M. Osborn, H. Berger, R.P. Donovan and G.W. Jones, J. Environ. Sci., 31 (1988) 45.
75. C.M. Osborn, Silicides. In R.B. Fair (ed.), Rapid Thermal Processing, Science and Technology, Academic Press, Boston, MA, 1993.
76. J.F. Gibbons, C.M. Gronet and K.E. Williams, Appl. Phys. Lett., 47 (1985) 721.
77. C.M. Gronet, J.C. Sturm, K.E. Williams, J.F. Williams and S.D. Wilson, Appl. Phys. Lett., 48 (1986) 1012.
78. K.H. Jung, T.Y. Hsieh and D.L. Kwong, Mater. Res. Soc. Symp. Proc., 224 (1991) 261.
79. J.C. Sturm, C.M. Gronet, C.A. King, S.D. Wilson and J.F. Wilson, IEEE Electron Devices Lett., 7 (1986) 577.
80. T.Y. Hsieh, K.H. Jung, D.L. Kwong, T.H. Koschmieder and J.C. Thompson, J. Electrochem. Soc., 139 (1992) 1971.
81. W.H. Liu, J.D. Leighton and S.A. Campbell, Appl. Phys. Lett., 61 (1992) 1676.
82. J.L. Regolini, D. Bansahel, E. Scheid and J. Mercier, Appl. Phys. Lett., 54 (1989) 658.
83. A. Kermani, in J.C. Gelpey, M.L. Green, R. Singh and J.J. Wortman (eds.), Rapid Thermal and Integrated Processing, Mater. Res. Soc. Symp. Proc., Vol. 224, Materials Research Society, Pittsburgh, PA, 1991.
84. J.D. Borland and C.I. Drowley, Solid State Technol., 28 (1985) 141.
85. T.Y. Hsieh, K.H. Jung and D.L. Kwong, J. Electrochem. Soc., 138 (1991) 1188.
86. M. Hierlemann, A. Kersch, C. Werner and H. Schaefer, J. Electrochem. Soc., 142 (1995) 259.
87. S.A. Campbell, in M. Meyyappan (ed.), Computational Modelling in Semiconductor Processing, Artech Publishing, 1994.
88. S.A. Campbell, K.H. Ahn, K.L. Knutson, B. Liu and J.D. Leighton, IEEE Trans. Semicond. Man., 4 (1991).
89. J.L. Regolini, J. Margail, C. Morin and P. Gouy-Pailler, in J.J. Wortman, J.C. Gelpey, M.L. Green, S.R.J. Brueck and F. Roozeboom (eds.), Rapid Thermal and Integrated Processing III, Mater. Res. Soc. Symp. Proc., Vol. 342, Materials Research Society, Pittsburgh, PA, 1994.
90. P. Rai-Choudhury and D.K. Schroder, J. Electrochem. Soc., 118 (1971) 107.
91. S.T. Liu, L. Chan and J.O. Borland, in G.W. Cullen and J.M. Blocher, Jr., (eds.), Chemical Vapor Deposition 1987, Electrochemical Society, Pennington, NJ, 1987, p. 428.
92. L. Ye, B.M. Armstrong and H.S. Gamble, Microelectron. Eng., 25 (1994) 153.
93. K.E. Violette, M.K. Sanganeria, M.C. Özturk, G. Harris and D.M. Moher, J. Electrochem. Soc., 141 (1994) 3269.
94. P. Rai-Choudhury and E. Salkovitz, J. Cryst Growth, 7 (1970) 361.
95. M.L. Green, D. Brasen, H. Temkin, V.C. Kannan and H.S. Luftman, in D. Hodul, J.C. Gelpey, M.L. Green and T.E. Seidel (eds.), Rapid Thermal Annealing-Chemical Vapor Deposition and Integrated Processing, Mater. Res. Soc. Symp. Proc., Vol. 334, Materials Research Society, Pittsburgh, PA, 1989.
96. L.J. Giling, Mater. Chem. Phys., 9 (1983) 117.
97. J.F. Gibbons, C.M. Gronet and K.E. Williams, Appl. Phys. Lett., 47 (1986) 721.
98. M.D. Giles, J.L. Hoyt and J.F. Gibbons, Mater. Res. Soc. Symp. Proc., 69 (1986) 323.
99. P.J. Roksnoer, J.W.F.M. Maes, A.T. Vink, C.J. Vriezema and P.C. Zalm, Appl. Phys. Lett., 58 (1991) 711.
100. J.E. Turner, J. Amano, C.M. Gronet and J.F. Gibbons, Appl. Phys. Lett., 50 (1987) 1601.
101. S.A. Campbell, J.D. Leighton, G.H. Case and K.L. Knutson, J. Vac. Sci. Technol. B, 7(1989) 1080.
102. C.A. King, R.W. Johnson, T.Y. Chiu, J.M. Sung and M.D. Morris, J. Electrochem. Soc., 142 (1995) 2430.
103. F. Wong, C.Y. Chen and Y.-H. Ku, in D. Hodul, J.C. Gelpey, M.L. Green and T.E. Seidel (eds.), Rapid Thermal Annealing-Chemical Vapor Deposition and Integrated Processing, Mater. Res. Soc. Symp. Proc., Vol. 146, Materials Research Society, Pittsburgh, PA, 1989, p. 27.
104. C.M. Gronet, J.C. Sturm, K.E. Williams and J.F. Gibbons, Appl. Phys. Lett., 48 (1986) 1012.
105. P.D. Agnello, T.O. Sedgwick and J. Cotte, J. Electrochem. Soc., 140 (1993) 2703.
106. T.Y. Hsieh, H.G. Chun and D.L. Kwong, Appl. Phys. Lett., 55 (1989) 2408.
107. T.O. Sedgwick, V.P. Kesan, P.D. Agnello, D.A. Grützmacher, D. Nguyen-Ngoc and S.S. Iyer, Proc. 1991 IEDM Meet., IEEE, Washington, DC, 1992.
108. L.J. Whitman, S.A. Joyce, J.A. Yarmoff, F.R. McFeely and L.J. Terminello, Surf. Sci., 232 (1990) 297.
109. J.F. Gibbons, S. Reynolds, J. Gronet, D. Hook, C. King, W. Copy, S. Wilson, C. Naika, G. Reed and R. Hull, in S.R. Wilson, R. Powell and D.E. Davies (eds.), Rapid Thermal Processing of Electronic Materials, Mater. Res. Soc. Symp. Proc., Vol. 92, Materials Research Society, Pittsburgh, PA, 1987, p. 281.
110. D.E. Jensen, S.J. Pennycook and J.-M. Baribeau, in J.C. Bean, S.S. Iyer and K.L. Wang (eds.), Silicon Molecular Beam Epitaxy, 1991, p. 141.
111. S. Adachi, J. Appl. Phys., 58 (1985) R1.
112. R. Hull, J.C. Bean, L. Peticolas, Y.H. Xie and Y.F. Hsieh, in J.C. Bean S.S. Iyer and K.L. Wang (eds.), Silicon Molecular Beam Epitaxy, 1991, p. 153.
113. J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth, 27 (1974) 118.
114. J.H. Van der Merwe, J. Appl. Phys., 34 (1963) 117.
115. R. People and J.C. Bean, Appl. Phys. Lett., 47 (1985) 322; 49 (1986) 229.
116. R. People and J.C. Bean, Appl. Phys. Lett., 47 (1985) 322; 49 (1986) 229.
117. D.W. Dodson and J.Y. Tsao, Appl. Phys. Lett., 51 (1987) 1325.
118. S.S. Iyer, G.L. Patton, J.M.C. Stork, B.S. Meyerson and D.L. Harame, IEEE Trans. Electron Devices, 36 (1989) 2043.
119. Y. Kohama, Y. Fukuda and M. Seki, Appl. Phys. Lett., 52 (1988) 380.
120. J.C. Bean, L.C. Feldman, A.T. Fiory, S. Nakahara and I.K. Robinson, J. Vac. Sci. Technol. A, 2 (1986) 436.
121. R. People and J.C. Bean, Appl. Phys. Lett., 47 (1986) 538.
122. R. People, Phys. Rev. B, 32 (1985) 1405.
123. J.L. Hoyt, C.A. King, D.B. Noble, C.M. Gronet, J.F. Gibbons, M.P. Scott, S.S. Laderman, S.J. Rosner, K. Nauka, J. Turner and T.I. Kamins, Thin Solid Films, 184 (1990) 93.
124. T.I. Kamins and D.J. Meyer, Appl. Phys. Lett., 59 (1991) 178.
125. J.L. Hoyt, in R.B. Fair (ed.), Rapid Thermal Processing, Academic Press, Boston, MA, 1993.
126. K. Fujinaga, Jpn. J. Appl. Phys., 34 (1) (1995) 4004.
127. C. Tsai, S.-M. Jang, J. Tsai and R. Reif, J. Appl. Phys., 69 (1991) 8158.
128. K.H. Jung, T.Y. Hsieh, D.L. Kwong, H.Y. Liu and R. Brennan, Appl. Phys. Lett., 60 (1992) 724.
129. W.H. Liu, S.A. Campbell and J.D. Leighton, Proc. Fall 1992 American Vacuum Society Symp.
130. W.H. Liu, J.D. Leighton and S.A. Campbell, Appl. Phys. Lett., 61 (1992) 1676.
131. S. Gu, Y. Zheng, R. Zhang, R. Wang, P. Han, X. Huang, P. Zhong, L. Hu, S. Zhu and J.N. Chen, Rapid Thermal and Integrated Processing III, Mater. Res. Soc. Symp. Proc., Vol. 342, Materials Research Society, Pittsburgh, PA, 1994, p. 57.
132. J.L. Hoyt, D.B. Noble, T. Ghani, C.A. King, J.F. Gibbons, M.P. Scott, S.S. Laderman, K. Nauka, J.E. Turner, S.J. Rosner and T.I. Kamins, in R. Chang, T. Sugano and V. Nguyen (eds.), Proc. Second Int. Conf. on Electronic Materials, Materials Research Society, Pittsburgh, PA, 1991, p. 551.
133. P.V. Schwartz and J.C. Sturm, J. Electrochem. Soc., 141 (1994) 1284.
134. T. Ghani, J.L. Hoyt, D.B. Noble, J.F. Gibbons, J.E. Turner and T.I. Kamins, Appl. Phys. Lett., 58 (1991) 1317.
135. T. Ghani, J.L. Hoyt, D.B. Noble, J.F. Gibbons, J.E. Turner and T.I. Kamins, in J.C. Bean, S.S. Iyer and K.L. Wang (eds.), Silicon Molecular Beam Epitaxy, Mater. Res. Soc. Symp. Proc., Vol. 220, Materials Research Society, Pittsburgh, PA, 1991, p. 385.
136. Z. Matutinovic, E. Chason and J.C. Sturm, J. Electron. Mater., 24 (1995) 725.
137. K.-B. Kim, J.C. Liao, B.J. Burrow and E.A. Sullivan, Rapid Thermal and Integrated Processing, Mater. Res. Soc. Symp. Proc., Vol. 224, Materials Research Society, Pittsburgh, PA, 1991, p. 247.
138. S P. Chiew, G. McBride, B M. Armstrong, J. Grimshaw, H S. Gamble and Trocha-Grimshaw, J. Microelectron. Eng., 25 (1994) 177.
139. F.H. Ruddell, B.M. Armstrong and H.S. Gamble, Rapid Thermal and Integrated Processing, Mater. Res. Soc. Symp. Proc., Vol. 224, Materials Research Society, Pittsburgh, PA, 1991. p. 241.
140. J. Mi, P. Letourneau, J.-D. Ganiere, M. Gailhanou, M. Dutoit, C. Dubois and J.C. Dupuy, Rapid Thermal and Integrated Processing III, Mater. Res. Soc. Symp. Proc., Vol. 342, Materials Research Society, Pittsburgh, PA, 1994, p. 255.
141. J.-D. Hwang, Y.-K. Fang, Y.-J. Song and D.-N. Yaung, Jpn. J. Appl. Phys., 34 (1) (1995) 1447.
142. J.P. Li and A.J. Steckl, J. Electrochem. Soc., 142 (1995) 634.
143. V. Cimalla, K.V. Karagodina, J. Pezoldt and G. Eichhom, Mater. Sci. Eng. B, 1-3 (1995) 170.
144. H.T. Chiu, C.S. Shie and S.H. Chuang, J. Mater. Res., 10 (1995) 2257.
145. M. Hiroi and T. Tatsumi, J. Cryst. Growth, 150 (1995) 1005.
146. J.L. Regolini, F. Gisbert, G. Dolino and P. Boucaud, Mater. Lett., 18 (1993) 57.
147. K. Eberl, S.S. Iyer, S. Zollner, J.C. Tsang and F.K. LeGoues, Appl. Phys. Lett., 60 (1992) 3033.
148. A.St. Amour, C.W. Liu, J.C. Sturm, Y. Lacroix and M.L.W. Thewalt, Appl. Phys. Lett., 67 (1995) 3915.
149. S. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981.
150. D.B. Noble, J.L. Hoyt, J.F. Gibbons, M.P. Scott, S.S. Laderman, S.J. Rosner and T.I. Kamins, Appl. Phys. Lett., 55 (1989) 1978.
151. C.A. King, J.L. Hoyt, C.M. Gronet, J.F. Gibbons, M.P. Scott and J. Turner, IEEE Trans. Electron Devices, 10 (1989) 52.
152. J.F. Gibbons, C.A. King, J.L. Hoyt, D.B. Noble, C.M. Gronet, M.P. Scott, S.J. Rosner, G. Reidd, S. Laderman, K. Nauka, J. Turner and T.I. Kamins, Proc. IEDM, IEEE, Piscataway, NJ, 1988, p. 566.
153. J.C. Sturm, P.V. Schwartz, E.J. Prinz and J. Manoharan, J. Vac. Sci. Technol. B, 9 (1991) 2011.
154. D.L. Harame, J.M.C. Stork, B.S. Meyerson, K.Y.-J. Hsu, J. Cotte, K.A. Jenkins, J.D. Cressler, P. Restle, E.F. Crabbe, S. Subbanna, T.E. Tice, B.W. Scharf and Y.A. Yasaitis, Proc. 1993 IEDM, IEEE, Piscataway, NJ, 1993, p. 71.
155. G.L. Patton, D.L. Harame, J.M.C. Stork, B.S. Meyerson, G.J. Scilla and E. Ganin, IEEE Electron Devices Lett., 10 (1989) 534.
156. J.C. Sturm, E.J. Prinz and C.W. Magee, IEEE Electron Devices Lett., 12 (1991) 303.
157. C. Smith and A.D. Welbourn, Proc. IEEE Bip. Circ. Tech. Meet., IEEE Piscataway, NJ, 1987, p. 57.
158. P. Warren, I. Sagnes, D. Dutartre, P.A. Badoz, J.M. Berroir, Y. Guldner, J.P. Vieren and M. Voos, Microelectron. Eng., 25 (1994) 171.
159. S. Vendonckt-Vandebroek et al., Proc. Symp. VLSI Technology IEEE, Piscataway, NJ, 1991.
160. V. Venkataraman, P.V. Schwartz and J.C. Sturm, Appl. Phys. Lett., 59 (1991) 2871.
161. F.K. LeGoues, R. Rosenberg, T. Nguyen and B.S. Meyerson, Mater. Res. Soc. Symp. Proc., Vol. 105, Materials Research Society, Pittsburgh, PA, 1988, p. 313.
162. J. Eugene, F.K. LeGoues, V.P. Kesan, S.S. Iyer and F.M. d'Heurle, Appl. Phys. Lett., 59 (1991) 78.
163. O.W. Holland, C.W. White and D. Fathy, Appl. Phys. Lett., 51 (1987) 520.
164. E.G. Frey, N.R. Parikh, M.L. Swanson, M.Z. Numan and W.K. Chu, Mater. Res. Soc. Symp. Proc., Vol. 105, Materials Research Society, Pittsburgh, PA, 1988, p. 177.
165. J. Batey and E. Tierney, J. Appl. Phys., 60 (1986) 3136.
166. D. Nayak, J.C.S. Woo, J.S. Park, K.L. Wang and K.P. MacWilliams, Proc. Device Research Conf., IEEE, Piscataway, NJ, 1990.
167. S.S. Iyer, P.M. Solomon, V.P. Kesan, A.A. Bright, J.L. Freeouf, T.N. Nguyen and A. Warren, IEEE Trans. Electron Devices, 12 (1991) 246.
168. P.M. Garone, V. Venkataraman and J.C. Sturm, Proc. IEDM, IEEE, Piscataway, NJ, 1991, p. 29.
169. E.A. Fitzgerald, Y.H. Xie, D. Monroe, G.P. Watson, J.M. Kuo and P J. Silverman, Mater. Sci. Forum, 143-144 (1994) 471.
170. J.C. Sturm, X. Xiao, H. Manoharan and P.V. Schwartz, Rapid Thermal and Integrated Processing, San Jose, CA, Proc. SPIE, Vol. 1595, Society for Optical Engineering, Bellingham, WA, 1991, p. 90.
171. Q. Mi, X. Xiao, J.C. Sturm, L.C. Lenchyshyn and M.L.W. Thewalt, IEEE Device Research Conf. Proc., VIB 7, IEEE, Piscataway, NJ, 1992.
172. L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, P.V. Schwartz, N.L. Rowell, J.-P. Noeel and D.C. Houghton, J. Electron. Mater., 22 (1993) 233.
173. Y S. Tang, W.-X. Ni, C M. Sotomayor Torres and G.V. Hansson, Electron. Lett., 31 (1995) 1385.
174. J.R. Jimenez, X. Xiao, J.C. Sturm and P.W. Pellegrini, J. Appl. Phys., 67 (1995) 506.
175. J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini and M.M. Weeks, Proc. SPIE, 2225 (1994) 393.
176. B.Y. Tsaur, C.K. Chen and S.A. Marino, IEEE Electron Devices Lett., 12 (1991) 293.
177. T.L. Lin, E.W. Jones, A. Ksendzov, S.M. Dejewski, R.W. Fathauer, T.N. Krabach and J. Maserjian, Proc. 1990 IEDM, IEEE, Piscataway, NJ, 1990, p. 641.
178. D.W. Greve, R. Misra, R. Strong and T.E. Schlesinger, Infrared Detectors - Materials, Processing, and Devices, Mater. Res. Soc. Symp. Proc., Vol. 299, Materials Research Society, Pittsburgh, PA, 1994, p. 267.
179. B. Jalali, L. Naval and A.F.J. Levi, J. Lightwave Technol., 12 (1994) 930.
180. M. Sugiyama, T. Morikawa, T. Tatsumi, T. Hashimoto and T. Tashiro, Proc. IEDM, IEEE, Piscataway, NJ, 1995, p. 583.