Agglomeration resistant self-aligned silicide process using N2 implantation into TiSi2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3639-3643

  Nishiyama, Akira ^a   Akasaka, Yasushi ^a   Ushiku, Yukihiro ^a   Hishioka, Kenji ^a   Suizu, Yasumasa ^a   Shiozaki, Masakazu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Agglomeration; MOSFET; Self aligned silicide; TiSi2, N2 implantation

Indexed keywords

FILM SHEET RESISTANCE; HIGH TEMPERATURE ANNEALING; SELF ALIGNED SILICIDE; TITANIUM SILICIDE;

AGGLOMERATION; ANNEALING; CHEMICAL BONDS; COMPOSITION; ELECTRIC RESISTANCE; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MORPHOLOGY; NITROGEN; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

MOSFET DEVICES;

EID: 0031167587     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3639     Document Type: Article

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